Superconductivity of Topological Surface States and Strong Proximity Effect in Sn 1–x Pb x Te‐Pb Heterostructures

Proximity effect in graphene-topological-insulator heterostructures.

We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity ...

Experimental observation of Dirac-like surface states and topological phase transition in Pb(1-x)Sn(x)Te(111) films.

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb r...

Topological Superconductivity in Artificial Heterostructures

Quasiparticle interference on the surface of the topological crystalline insulator Pb 1 − x Sn x

Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase, which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle re...

Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects

In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi₂Se ...